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          <dc:title>2H-NbSe_2の電気抵抗異常とCDW</dc:title>
          <dc:title>ELECTRICAL RESISTANCE ANOMALY AND CDW OF 2H-NbSe_2</dc:title>
          <dc:creator>小原, 幸三</dc:creator>
          <dc:creator>OBARA, Kozo</dc:creator>
          <dc:creator>平, 常三</dc:creator>
          <dc:creator>TAIRA, Tunezo</dc:creator>
          <dc:subject>427</dc:subject>
          <dc:description>The compounds have been prepared by direct synthesis in quartz ampoules. Transport is performed with iodine-5mg cm^&lt;-3&gt; tube volume-in 300mm×10^&lt;φ&gt;mm tube in a gradient T_H=800°C→T_L=725°C.
Crystals are investigated by X-ray technique and electron microscope technique, and decided as 2H-NbSe_2.
Single crystals of 2H-NbSe_2 have been studied using mesurement of temperature dependence of electrical resistance. The onset temperature of the incommensurate state is 35K.</dc:description>
          <dc:description>departmental bulletin paper</dc:description>
          <dc:publisher>鹿児島大学</dc:publisher>
          <dc:publisher>Kagoshima University</dc:publisher>
          <dc:date>1978-09</dc:date>
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          <dc:identifier>鹿児島大学工学部研究報告</dc:identifier>
          <dc:identifier>20</dc:identifier>
          <dc:identifier>121</dc:identifier>
          <dc:identifier>127</dc:identifier>
          <dc:identifier>The research reports of the Faculty of Engineering, Kagoshima University</dc:identifier>
          <dc:identifier>0451212X</dc:identifier>
          <dc:identifier>AN00040363</dc:identifier>
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          <dc:language>jpn</dc:language>
          <dc:rights>open access</dc:rights>
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