@article{oai:ir.kagoshima-u.ac.jp:00010723,
 author = {沼田, 正 and NUMATA, Tadashi and 篠原, 正典 and SHINOHARA, Masanori and 七呂, 勇 and HICHIRO, Isamu},
 journal = {鹿児島大学工学部研究報告, The research reports of the Faculty of Engineering, Kagoshima University},
 month = {Nov},
 note = {Thin films of SnSe single crystal with (001) growth surface were grown in an argon atmosphere
by the subrimation method.
Polarized memory effects were found in point contact diodes constructed with these SnSe
crystals and Cu whiskers. The detailed features of memory characteristics depend on the choice
of metals for the point contact electrode, on the sharpness of the contact and also electrical
forming is necessary to cause the memory effect.
When the diode was switched from OFF to ON state, a damage was appeared under the
contact electrode. Electron micrprobe X-ray analysis has been performed on these damages.},
 pages = {85--90},
 title = {SnSe単結晶の気相成長及び極性メモリー現象},
 volume = {19},
 year = {1977}
}