@article{oai:ir.kagoshima-u.ac.jp:00010724,
 author = {肥後, 悟 and HIGO, Satoru and 沼田, 正 and NUMATA, Tadashi},
 journal = {鹿児島大学工学部研究報告, The research reports of the Faculty of Engineering, Kagoshima University},
 month = {Nov},
 note = {It has been known that applying a mechanical vibrating stress perpendicularly to p-Se/n-CdSe
heterojunction, then the piezo-electromotive force with the same frequency of the mechanical
vibrating stress was generated.
We infered that this piezo-electromotive force was created by variations of the width of
heterojunction barrier caused by the vibrating piezo-electric polarization of both CdSe and Se
due to stress-strain.
Using Gauss' theorem and solving Poisson's equation for the p-Se/n-CdSe heterojuntcion, the
piezo-electromotive force can be deduced theoretically.
The theoretical results of the piezo-electromotive force agree well with experimental values.},
 pages = {91--98},
 title = {p-Se/n-CdSe ヘテロ接合のBARRIER PIEZO-EFFECT},
 volume = {19},
 year = {1977}
}