@article{oai:ir.kagoshima-u.ac.jp:00012747,
 author = {白樂, 善則 and HAKURAKU, Yoshinori and 坂元, 渉 and SAKAMOTO, Wataru and 大串, 哲彌 and OGUSHI, Tetsuya and 沼田, 正 and NUMATA, Tadashi},
 journal = {鹿児島大学工学部研究報告, The research reports of the Faculty of Engineering, Kagoshima University},
 month = {Nov},
 note = {A dc getter sputtering system was designed which eliminates the need for ultrahigh vacuum in preparing thin　films of materials sensitive to gaseous impurities. This sputtering technique uses the "gettering action" of part of the sputtered atoms to purify an Ar gas atmosphere in the sputtering inner chamber and can very decrease reactive gases such as H_2O, O_2 and N_2. We used this method for preparing superconducting Nb-Ge films having now the highest transition temperature. The properties of these films are studied and the superconducting transition onset temperature up to~18.5K for Nb-Ge films was obtained.},
 pages = {105--109},
 title = {直流ゲッタースパッタリングによるNb-Ge薄膜の製作（I）},
 volume = {19},
 year = {1977}
}