{"created":"2023-07-25T08:12:49.951173+00:00","id":13272,"links":{},"metadata":{"_buckets":{"deposit":"5b1688fb-72f0-4872-b018-c09da70f6ef8"},"_deposit":{"created_by":18,"id":"13272","owners":[18],"pid":{"revision_id":0,"type":"depid","value":"13272"},"status":"published"},"_oai":{"id":"oai:ir.kagoshima-u.ac.jp:00013272","sets":["54:157"]},"author_link":["134084"],"item_5_date_6":{"attribute_name":"作成日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2015-01-01","subitem_date_issued_type":"Collected"}]},"item_5_description_4":{"attribute_name":"要約(Abstract)","attribute_value_mlt":[{"subitem_description":"修士論文(鹿児島大学大学院理工学研究科電気電子工学専攻博士前期課程)\n\n本研究は、SiCを用いた埋め込みゲート型静電誘導トランジスタ（SiC-BGSIT）のスイッチング特性を明らかにすることに加え、ドレイン‐ゲート間相互作用を表現できるSPICE素子モデルの構築を目的とする。SiC-BGSITはSi-MOSFETと比べて、より低損失、高耐圧、高温動作であるものの、新しい素子であることに加え、逆のオン・オフ特性（ノーマリオン特性）を持つため、応用面から詳しく調べられていない。研究では、この相互作用について実験的に調べ、SPICE3のJFETモデルを利用して、SiC-BGSITの素子モデル構築を試みた。結果として、ドレイン‐ゲート間相互作用を定量的に説明できる素子モデルを得た。","subitem_description_language":"ja","subitem_description_type":"Other"}]},"item_5_publisher_23":{"attribute_name":"公開者・出版者","attribute_value_mlt":[{"subitem_publisher":"鹿児島大学","subitem_publisher_language":"ja"},{"subitem_publisher":"カゴシマ ダイガク","subitem_publisher_language":"ja-Kana"},{"subitem_publisher":"Kagoshima University","subitem_publisher_language":"en"}]},"item_5_subject_15":{"attribute_name":"NDC","attribute_value_mlt":[{"subitem_subject":"549.6","subitem_subject_scheme":"NDC"}]},"item_5_text_44":{"attribute_name":"備考","attribute_value_mlt":[{"subitem_text_value":"指導教員: 田中哲郎准教授"}]},"item_5_version_type_14":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"井, 幸孝","creatorNameLang":"ja"},{"creatorName":"イ, ユキタカ","creatorNameLang":"ja-Kana"},{"creatorName":"I, Yukitaka","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-10-31"}],"displaytype":"detail","filename":"修士論文　井幸孝(製本用）.pdf","filesize":[{"value":"2.7 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"修士論文　井幸孝(製本用）.pdf","objectType":"fulltext","url":"https://ir.kagoshima-u.ac.jp/record/13272/files/修士論文　井幸孝(製本用）.pdf"},"version_id":"6ce5638d-09b9-431d-9ff1-ce6c31cf6c48"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"thesis","resourceuri":"http://purl.org/coar/resource_type/c_46ec"}]},"item_title":"SiCトランジスタ のスイッチング特性とドレイン-ゲート間相互作用について","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"SiCトランジスタ のスイッチング特性とドレイン-ゲート間相互作用について","subitem_title_language":"ja"},{"subitem_title":"SiC トランジスタ ノ スイッチング トクセイ ト ドレイン‐ゲート カン ソウゴ サヨウ ニツイテ","subitem_title_language":"ja-Kana"}]},"item_type_id":"5","owner":"18","path":["157"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2015-11-09"},"publish_date":"2015-11-09","publish_status":"0","recid":"13272","relation_version_is_last":true,"title":["SiCトランジスタ のスイッチング特性とドレイン-ゲート間相互作用について"],"weko_creator_id":"18","weko_shared_id":-1},"updated":"2024-01-05T02:50:35.203195+00:00"}