@article{oai:ir.kagoshima-u.ac.jp:00004706,
 author = {鶴丸, 哲哉 and TSURUMARU, Tetsuya and 坂元, 渉 and SAKAMOTO, Wataru and 大串, 哲彌 and OGUSHI, Tetsuya and 沼田, 正 and NUMATA, Tadashi},
 journal = {鹿児島大学工学部研究報告, The research reports of the Faculty of Engineering, Kagoshima University},
 month = {Sep},
 note = {Usual sputtering methods have a weakpoint that sputtering current is a little and a sticking velocity is low during the deposition process. We have been troubled by low germanium sticking coefficient in producting a Nb_3Ge thin film. Therefore, in order to make it higher, we manufactured the high rate sputtering apparatus wherein a magnetic field is perpendicular to an electric field in contradiction to a parallel electric field in the former. Utilizing this apparatus, we could increase the sputtering current
by nearly 2-3×10 times. As a result, germanium sticking coefficicnt was made higher to obtain a stoichi-ometeic Nb_3Ge and also this method was clarified to be very useful in shortening the sputtering time.},
 pages = {93--96},
 title = {ハイレートスパッタリング装置の製作},
 volume = {20},
 year = {1978}
}