@article{oai:ir.kagoshima-u.ac.jp:00007751,
 author = {肥後, 悟 and HIGO, Satoru and 岡, 茂八郎 and OKA, Mohachiro and 沼田, 正 and NUMATA, Tadashi and 青木, 昌治 and AOKI, Masaharu},
 journal = {鹿児島大学工学部研究報告, The research reports of the Faculty of Engineering, Kagoshima University},
 month = {Sep},
 note = {ZnSe crystals were grown by a chemical transport method with iodine.
These crystals obtained above method, were zincblended (cubic) structure.
These crystals were heated in molten zinc at 1000°C for four and eight hours to decrease the resistivities of ZnSe crystals, and then diffused tellurium at 1000°C for two hours to investigate the effect of tellurium diffusion on photoluminescence properties.
As the results of heat treatment and diffusion treatment ; we certified that the resistivities of ZnSe crystals decreased from 10^<7> Ω･cm to 20 Ω･cm after heat treatment in molten zinc for eight hours, and that a peak position of photoluminescence spectrum of ZnSe crystal diffused tellurium, shifted to a short wave lenghth range at 77 K and 4.2 K.},
 pages = {167--171},
 title = {ヨウ素を用いた化学輸送反応法によるZnSe結晶のフォトルミネセンス（第一報）},
 volume = {21},
 year = {1979}
}