{"created":"2023-07-25T08:09:24.233966+00:00","id":8988,"links":{},"metadata":{"_buckets":{"deposit":"56ca1909-7c25-4afa-8f45-6294d2d7299d"},"_deposit":{"created_by":18,"id":"8988","owners":[18],"pid":{"revision_id":0,"type":"depid","value":"8988"},"status":"published"},"_oai":{"id":"oai:ir.kagoshima-u.ac.jp:00008988","sets":["54:79"]},"author_link":["42942"],"item_8_date_6":{"attribute_name":"作成日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2014-06-10","subitem_date_issued_type":"Collected"}]},"item_8_description_4":{"attribute_name":"要約(Abstract)","attribute_value_mlt":[{"subitem_description":"2010-2013年度科学研究費助成事業（若手研究（A））研究成果報告書　課題番号：22686032　研究代表者：寺井慶和（鹿児島大学・理工学研究科・准教授）","subitem_description_language":"ja","subitem_description_type":"Other"},{"subitem_description":"シリサイド半導体β-FeSi2は、近赤外の波長領域で受・発光機能を示す新規シリコン光エレクトロニクス材料である。本研究では、能動的にひずみを導入し、β-FeSi2のバンド構造を制御することを目的とした。その結果、β-FeSi2エピタキシャル膜のa軸方向へのひずみ導入が、間接遷移型から直接遷移型へのバンド構造制御に有効であることを見出した。また、その研究過程で、低残留キャリア濃度の高品質β-FeSi2エピタキシャル膜の作成にも成功した。","subitem_description_language":"ja","subitem_description_type":"Other"},{"subitem_description":"Semiconducting  silicide, beta-FeSi2, is a novel silicon-optoelectronic material which shows photoresponse and light emission in the wavelength range of near infrared. In this study, we have studied the strain-induced modification of band structure in beta-FeSi2. In the results, it was revealed that an introduction of strain along a-axis direction of the beta-FeSi2 epitaxial film is effective to control the band structure from indirect transition type to direct transition one. In addition, we have succeeded in the growth of high quality beta-FeSi2 epitaxial film with low residual carrier concentration.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_8_publisher_23":{"attribute_name":"公開者・出版者","attribute_value_mlt":[{"subitem_publisher":"鹿児島大学","subitem_publisher_language":"ja"},{"subitem_publisher":"Kagoshima University","subitem_publisher_language":"en"}]},"item_8_subject_15":{"attribute_name":"NDC","attribute_value_mlt":[{"subitem_subject":"549","subitem_subject_scheme":"NDC"}]},"item_8_text_41":{"attribute_name":"科研費番号 ","attribute_value_mlt":[{"subitem_text_value":"22686032"}]},"item_8_version_type_14":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"寺井, 慶和","creatorNameLang":"ja"},{"creatorName":"TERAI, Yoshikazu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"42942","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000090360049","nameIdentifierScheme":"NRID","nameIdentifierURI":" "}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-10-28"}],"displaytype":"detail","filename":"22686032_寺井慶和.pdf","filesize":[{"value":"482.7 kB"}],"format":"application/pdf","mimetype":"application/pdf","url":{"label":"22686032_寺井慶和.pdf","objectType":"fulltext","url":"https://ir.kagoshima-u.ac.jp/record/8988/files/22686032_寺井慶和.pdf"},"version_id":"7ad1b077-aeb0-48fe-82bd-45134708a64d"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"結晶成長","subitem_subject_language":"ja","subitem_subject_scheme":"Other"},{"subitem_subject":"半導体光物性","subitem_subject_language":"ja","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"シリサイド半導体ひずみ超格子によるバンド構造の能動的制御","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"シリサイド半導体ひずみ超格子によるバンド構造の能動的制御","subitem_title_language":"ja"},{"subitem_title":"Control of band structure in strained silicide structures","subitem_title_language":"en"}]},"item_type_id":"8","owner":"18","path":["79"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2015-05-19"},"publish_date":"2015-05-19","publish_status":"0","recid":"8988","relation_version_is_last":true,"title":["シリサイド半導体ひずみ超格子によるバンド構造の能動的制御"],"weko_creator_id":"18","weko_shared_id":-1},"updated":"2024-05-23T02:17:58.168767+00:00"}