{"_buckets": {"deposit": "eaed6717-ca53-4da1-8ee0-954f3f3e816a"}, "_deposit": {"created_by": 3, "id": "4640", "owners": [3], "pid": {"revision_id": 0, "type": "depid", "value": "4640"}, "status": "published"}, "_oai": {"id": "oai:ir.kagoshima-u.ac.jp:00004640", "sets": ["79"]}, "author_link": ["112769", "112770", "22656"], "item_8_alternative_title_18": {"attribute_name": "別言語のタイトル", "attribute_value_mlt": [{"subitem_alternative_title": "Development of High Performances and Novel Functions in Low-Growth Temperature (Cu, C) Superconducting Film by Controlling Multi-layer Structure"}]}, "item_8_alternative_title_19": {"attribute_name": "タイトルよみ", "attribute_value_mlt": [{"subitem_alternative_title": "テイセイチョウ オンド (Cu, C)ケイ チョウデンドウ ハクマク ザイリョウ ノ タソウ コウゾウカ ニヨル コウセイノウカ・シンキノウ ハツゲン"}]}, "item_8_date_6": {"attribute_name": "作成日", "attribute_value_mlt": [{"subitem_date_issued_datetime": "2011-05-12"}]}, "item_8_description_4": {"attribute_name": "要約(Abstract)", "attribute_value_mlt": [{"subitem_description": "平成20-22年度科学研究費補助金(基盤研究(C))研究成果報告書 課題番号：20560305　研究代表者：寺田教男 (鹿児島大学大学院理工学研究科（工学系）教授）)", "subitem_description_type": "Other"}, {"subitem_description": "超伝導を利用したデバイスは、超高速動作、低消費電力といった高いポテンシャルを持つ、反面、毒性元素の含有、高い形成温度・超伝導異方性などの応用上の問題を持つ高温超伝導体に対して、本研究では毒性元素を含まず、多層化することで超伝導転移温度が向上すると期待されているCu系高温超伝導体に注目し、その薄膜材料化を目指した。この系はバルクにおいては高温高圧化でのみ成長する準安定層であるが、まず、炭酸基添加と格子ミスフィット率が比較的小さい単結晶基板上でのエピタキシャル成長よる構造安定化により、低成長温度500から600℃において、(Cu, C)-1201 構造の薄膜形成に成功した。この薄膜の表面凹凸が、当初、ユニットセル高さの数倍と、一層の特性向上が見込める多層化への移行が困難であったことから、続いて、基板と薄膜の中間の格子定数・類似の結晶構造を持つSrCuO_2をバッファとして挿入する手法を導入した。その結果、超伝導性と多層型に必要平坦性を合わせ持つ(Cu, C)-1201の作製条件の確立に成功した。この上に1201層とCaCuO_2無限層を交互堆積した [CaCuO_2/(Cu, C)-1201]×N構造を行ったところ、T_{c-onset}：100K、T_{c(ρ=0)：70K級の高い超伝導特性を持つ超伝導薄膜の作製に成功した。多層構造試料の構造解析結果から、CaCuO_2－(Cu, C)-1201 界面における歪効果が、この超伝導特性の大幅な向上の起源であることが明らかとなった。以上により、人工積層手法による、毒性元素を含まず、高臨界温度を有する高温超伝導薄膜材料の創成という本研究課題の目的を達成したと考える。", "subitem_description_type": "Other"}, {"subitem_description": "Thin film process and enhancement of properties of (Cu, C)-system [(Cu, C)Ba_2Ca_{n-1}Cu_nO_x : (Cu, C)-12(n-1)n ] high temperature superconductors have been studied. Contrary to the necessity of high temperature and high pressure for fabrication of bulk ceramics of this system, thin films of (Cu, C)-1201 phase have successfully synthesized by utilizing pulsed laser deposition on SrTiO_3 substrate under CO_2 mixed atmosphere. The (Cu, C)-1201 films show technological merits of the low growth temperature of 500 ~ 600 °C and superconducting critical temperature about 50 K which is sufficient to applications of high-speed digital circuits. Though surface roughness of the 1201 films directly on the substrate exceeded c-axis lattice parameter of this phase, it has been improved up to sub-nano meter level by the insertion of SrCuO_2 buffer with infinite layer structure between the 1201 film and the substrate. The (Cu, C)-1201/SrCuO_2 structures exhibit similar superconducting properties. These results mean that it is satisfied the necessary conditions for the investigation of the effect of multi-stacking of 1201 and related layers on superconducting properties of it. In the present study, remarkable enhancements of critical temperature are achieved in [CaCuO_2/(Cu, C)-1201]×N (N: repetition number of fundamental structure) multi-layered structure. T_{c-onset} and T_{c(ρ=0) reach ~ 100 K and \u003e 70 K, respectively. It is also noteworthy that the growth temperature of such high-Tc specimens still stays around 500 °C. Structural analysis of the high-Tc specimens has revealed the strain at their hetero-interfaces is the main origin of the enhancement of superconductivity. The achievements mentioned above shows that the novel superconducting film with technological merits: high Tc and low growth temperature, without toxic element has developed by adopting the hetero-interface effect to (Cu, C)-1201 layer, which also means the objective of this research is successfully achieved.", "subitem_description_type": "Other"}]}, "item_8_full_name_2": {"attribute_name": "著者よみ", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "112769", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "テラダ, ノリオ"}]}]}, "item_8_full_name_3": {"attribute_name": "別言語の著者", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "112770", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "TERADA, Norio"}]}]}, "item_8_publisher_23": {"attribute_name": "公開者・出版者", "attribute_value_mlt": [{"subitem_publisher": "鹿児島大学"}]}, "item_8_subject_15": {"attribute_name": "NDC", "attribute_value_mlt": [{"subitem_subject": "427", "subitem_subject_scheme": "NDC"}]}, "item_8_text_24": {"attribute_name": "公開者よみ", "attribute_value_mlt": [{"subitem_text_value": "カゴシマ ダイガク"}]}, "item_8_text_25": {"attribute_name": "公開者別名", "attribute_value_mlt": [{"subitem_text_value": "Kagoshima University"}]}, "item_8_text_30": {"attribute_name": "NIIタイプ", "attribute_value_mlt": [{"subitem_text_value": "Research Paper"}]}, "item_8_text_41": {"attribute_name": "科研費番号 ", "attribute_value_mlt": [{"subitem_text_value": "20560305"}]}, "item_8_version_type_14": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "寺田, 教男"}], "nameIdentifiers": [{"nameIdentifier": "22656", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "1000020322323", "nameIdentifierScheme": "NRID", "nameIdentifierURI": " "}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2016-10-27"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "20560305seika.pdf", "filesize": [{"value": "635.5 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 635500.0, "url": {"label": "20560305seika.pdf", "url": "https://ir.kagoshima-u.ac.jp/record/4640/files/20560305seika.pdf"}, "version_id": "092ef538-4dd6-49f2-a5d3-aec3614a7b7e"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "超伝導材料・素子", "subitem_subject_scheme": "Other"}, {"subitem_subject": "量子エレクトロニクス", "subitem_subject_scheme": "Other"}, {"subitem_subject": "強相関エレクトロニクス", "subitem_subject_scheme": "Other"}, {"subitem_subject": "表面・界面物性", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "research report", "resourceuri": "http://purl.org/coar/resource_type/c_18ws"}]}, "item_title": "低成長温度(Cu,C)系超伝導薄膜材料の多層構造化による高性能化・新機能発現", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "低成長温度(Cu,C)系超伝導薄膜材料の多層構造化による高性能化・新機能発現"}]}, "item_type_id": "8", "owner": "3", "path": ["79"], "permalink_uri": "http://hdl.handle.net/10232/11968", "pubdate": {"attribute_name": "公開日", "attribute_value": "2015-01-06"}, "publish_date": "2015-01-06", "publish_status": "0", "recid": "4640", "relation": {}, "relation_version_is_last": true, "title": ["低成長温度(Cu,C)系超伝導薄膜材料の多層構造化による高性能化・新機能発現"], "weko_shared_id": 3}