{"_buckets": {"deposit": "6f190344-9c33-4a68-a644-1fe6f8c50e45"}, "_deposit": {"created_by": 3, "id": "8993", "owners": [3], "pid": {"revision_id": 0, "type": "depid", "value": "8993"}, "status": "published"}, "_oai": {"id": "oai:ir.kagoshima-u.ac.jp:00008993", "sets": ["79"]}, "author_link": ["112840", "112839", "22656"], "item_8_alternative_title_18": {"attribute_name": "別言語のタイトル", "attribute_value_mlt": [{"subitem_alternative_title": "Development of High Temperature and Rare-Earth Less Superconducting Thin Films by Controlling (Cu, C)-based Artificial Multi-layer Structure"}]}, "item_8_alternative_title_19": {"attribute_name": "タイトルよみ", "attribute_value_mlt": [{"subitem_alternative_title": "(Cu, C)ケイ セキソウ コウゾウ オ モチイタ コウリンカイ オンド・レアアース レス チョウデンドウ ハクマク ザイリョウ ノ ソウセイ"}]}, "item_8_date_6": {"attribute_name": "作成日", "attribute_value_mlt": [{"subitem_date_issued_datetime": "2014-06-19"}]}, "item_8_description_4": {"attribute_name": "要約(Abstract)", "attribute_value_mlt": [{"subitem_description": "2011-2013年度科学研究費助成事業（基盤研究（B））研究成果報告書　課題番号：23360139　研究代表者：丸山征郎（鹿児島大学・理工学研究科・教授）", "subitem_description_type": "Other"}, {"subitem_description": "独自に見出した低成長温度・レアアースレス等の特徴を持つ(Cu, C)-1201極薄膜の超電導発現機構を検討し、ヘテロ界面歪効果が重要なことを確定するとともに、歪みエピタキシャル成長する類縁物質を1201層の上下に挿入し両界面の格子不整合を制御することで特性向上を達成した。この積層の人為的繰り返しは単位幅当たりの臨界電流密度向上の有望な手法として位置づけられる。また、全元素同時堆積法による薄膜においても超電導発現に成功し、実用的作成法の端緒を開くことに成功した。以上より、人工積層構造の制御により、無毒性元素・レアアースレス高温超伝導薄膜材料の創成、形成基盤技術確立という目的を達成したと考える。", "subitem_description_type": "Other"}, {"subitem_description": "The investigation of structural origin and the development of practical growth technique of the (Cu,  C)-1201 rare-earth element free, superconducting films have been performed. The compressive interfacial strain at the top and bottom of the 1201 layer is a dominant factor for the emergence of superconductivity, which is optimized by controlling thickness of the over- and under-layers grown in the strained epitaxial-mode. The optimization yields an emergence of superconductivity on the ultra-thin 1201 layer. The repeating growth of this layered structure is a promising method for improving the critical current density per unit width. The emergence of superconductivity has been also confirmed on the films grown by the co-deposition of all of the constituents. As mentioned above, the fundamentals for the growth of the rare-earth free superconducting film and the foothold for practical growth techniques are established, which means the objective of this research is successfully achieved.", "subitem_description_type": "Other"}]}, "item_8_full_name_2": {"attribute_name": "著者よみ", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "112839", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "テラダ, ノリオ"}]}]}, "item_8_full_name_3": {"attribute_name": "別言語の著者", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "112840", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "TERADA, Norio"}]}]}, "item_8_publisher_23": {"attribute_name": "公開者・出版者", "attribute_value_mlt": [{"subitem_publisher": "鹿児島大学"}]}, "item_8_subject_15": {"attribute_name": "NDC", "attribute_value_mlt": [{"subitem_subject": "427", "subitem_subject_scheme": "NDC"}]}, "item_8_text_24": {"attribute_name": "公開者よみ", "attribute_value_mlt": [{"subitem_text_value": "カゴシマ ダイガク"}]}, "item_8_text_25": {"attribute_name": "公開者別名", "attribute_value_mlt": [{"subitem_text_value": "Kagoshima University"}]}, "item_8_text_30": {"attribute_name": "NIIタイプ", "attribute_value_mlt": [{"subitem_text_value": "Research Paper"}]}, "item_8_text_41": {"attribute_name": "科研費番号 ", "attribute_value_mlt": [{"subitem_text_value": "23360139"}]}, "item_8_version_type_14": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "寺田, 教男"}], "nameIdentifiers": [{"nameIdentifier": "22656", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "1000020322323", "nameIdentifierScheme": "NRID", "nameIdentifierURI": " "}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2016-10-28"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "23360139_寺田教男.pdf", "filesize": [{"value": "683.0 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 683000.0, "url": {"label": "23360139_寺田教男.pdf", "url": "https://ir.kagoshima-u.ac.jp/record/8993/files/23360139_寺田教男.pdf"}, "version_id": "d513974c-6023-4367-b5fd-a3ae7de785a0"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "超電導材料・素子", "subitem_subject_scheme": "Other"}, {"subitem_subject": "表面・界面物性", "subitem_subject_scheme": "Other"}, {"subitem_subject": "薄膜", "subitem_subject_scheme": "Other"}, {"subitem_subject": "強相関エレクトロニクス", "subitem_subject_scheme": "Other"}, {"subitem_subject": "量子エレクトロニクス", "subitem_subject_scheme": "Other"}, {"subitem_subject": "レアアース・レス", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "research report", "resourceuri": "http://purl.org/coar/resource_type/c_18ws"}]}, "item_title": "(Cu, C)系積層構造を用いた高臨界温度・レアアースレス超伝導薄膜材料の創成", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "(Cu, C)系積層構造を用いた高臨界温度・レアアースレス超伝導薄膜材料の創成"}]}, "item_type_id": "8", "owner": "3", "path": ["79"], "permalink_uri": "http://hdl.handle.net/10232/23838", "pubdate": {"attribute_name": "公開日", "attribute_value": "2015-05-19"}, "publish_date": "2015-05-19", "publish_status": "0", "recid": "8993", "relation": {}, "relation_version_is_last": true, "title": ["(Cu, C)系積層構造を用いた高臨界温度・レアアースレス超伝導薄膜材料の創成"], "weko_shared_id": 3}